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This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License
Article
Development of Ferroelectric RAM (FRAM) for Mass Production
Author(s)
Takashi Eshita1, Wensheng Wang1, Kou Nakamura1, Souichirou Ozawa1, Youichi Okita1, Satoru Mihara1, Yukinobu Hikosaka1, Hitoshi Saito1, Junichi Watanabe1, Ken’ichi Inoue1, Hideshi Yamaguchi2 and Kenji Nomura2
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DOI:10.17265/2159-5348/2015.01.005
Affiliation(s)
1. System Memory Business Division, Fujitsu Semiconductor Limited, Kohoku-ku, Yokoham 222-0033, Japan 2. Factory Engineering Laboratory, Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
ABSTRACT
we have developed ferroelectric capacitor fabrication technique to realize low-voltage and high-density ferroelectric random access memory (FRAM). High temperature deposited IrOx top electrode reveals high crystalline quality which drastically reduces the degradation of ferroelectric film by preventing hydrogen diffusion into ferroelectric film. This improvement enables us to commercialize highly-reliable 1T1C FRAM with memory density of 4 Mb or larger.
KEYWORDS
Ferroelectric, PZT, LCSPZT, IrO.
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