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Properties of a MOS Device on Single Layer Molybdenum Disulfide



Author(s)

Ravi Kumar Chanana

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DOI:10.17265/2161-6213/2023.1-3.003

Retired Professor, Self-Employed Independent Researcher, Greater Noida, U.P. 201312, India

The properties of a metal-oxide-semiconductor device on a single layer MoS₂ (molybdenum disulfide) semiconductor are determined theoretically utilizing the concept of physics that the carrier effective masses in materials are related to the intrinsic Fermi energy levels in materials by the universal mass-energy equivalence equation given as dE/E = dm/m, where E is the energy and m is the mass of the free electron. The known parameters of electron effective mass of 0.48 m and the direct bandgap of 1.8 eV for monolayer MoS₂ semiconductor are utilized to determine the properties of the MOS (metal-oxide-semiconductor) device, with the given previous research consequence that the threshold for electron heating in SiO₂ is 2 MV/cm-eV.

Molybdenum disulfide, mass-energy equivalence, MOS device, Fowler-Nordheim tunnelling.