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Article
Photodiodes from Hetero Junctions of Intrinsic 4H-SiC and Si Semiconductor Materials
Author(s)
Ravi Kumar Chanana
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DOI:10.17265/2161-6221/2023.4-6.001
Affiliation(s)
Retired Professor, Self-Employed Independent Researcher, Gr. Noida-201310, India
ABSTRACT
In this research article, it is proposed that photodiodes can be made with hetero junctions formed out of intrinsic 4H-SiC and intrinsic silicon in the form of UV (ultraviolet) light activated switch, a very sensitive UV photo detector, or an UV solar cell. Other semiconductors can be tried for other longer wavelength devices.
KEYWORDS
Hetero junctions, intrinsic semiconductors, 4H-SiC, silicon.
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