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Determination and Improvement of Deposition Parameters of TiO₂ Thin Films via ALD




Author(s)

Meryem Bozkaya¹, Ismail Kupa², Meryem Polat Gonullu², Recep Zan³, Ali Kemal Okyay^4,5 and Hakan Ates²

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DOI:10.17265/2161-6221/2019.1-2.005

1. Department of Advanced Technologies, Graduate School of Natural and Applied Sciences, University of Gazi, Ankara, Turkey
2. Department of Metallurgical and Materials Engineering, Faculty of Technology, University of Gazi, Ankara, Turkey
3. Department of Physics, Faculty of Arts and Sciences, University of Niğde Ömer Halisdemir, Niğde, Turkey
4. Okyay Technology and R & D, Ankara, Turkey
5. Dept. of Electrical Engineering, Stanford University, CA 94305, USA

In recent years, with the development of technology, interest in microelectronics and thin film devices has increased considerably. Future improvements in microelectronics and thin film devices are dependent on the progress of novel materials and new deposition processes. In particular, the continuing drive to some devices such as silicon devices will soon require SiO₂ gate and oxide layers with a thickness on the order of a few nanometers as 1 or 2 nm. Titanium dioxide is a candidate material in microelectronic and thin film devices, a wide band gap semiconductor that exhibits various crystal structures. Similarly, thin film techniques like ALD (atomic layer deposition) attract attention for the preparation of these candidate materials with higher film uniformity and conformity. Present study demonstrates how TiO₂ thin films were growth by ALD technique on silicon substrates at 100 °C, 150 °C and 200 °C temperatures. Different deposition conditions were examined to determine to increase film quality and efficient production of set up. XPS (X-ray photoelectron spectroscopy) technique was used to obtain the surface composition of the TiO₂ films. Film thicknesses and crystal structures of the films were investigated by ellipsometry and XRD (X-ray diffraction) methods. Electrical properties of the films were measured by using four probe techniques, as well. Obtained results were evaluated in terms of repeatability of recipes and application potential.

TiO₂ films, ALD, film grown, optical properties.