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This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License
Article
Temperature Dependence of Photoluminescence of Porous Silicon
Author(s)
Róbert Brunner1, Emil Pincik1, Michal Kučera2, Pavel Vojtek3 and Zuzana Zábudlá3
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DOI:10.17265/1934-8975/2018.07.002
Affiliation(s)
1. Institute of Physics, SAS, Dubravska cesta 9, Bratislava 84511, Slovak Republic
2. Institute of Electrical Engineering SAS, Dubravska cesta 9, Bratislava 84104, Slovak Republic
3. Faculty of Mathematics, Physics, and Informatics of Comenius University, Mlynska dolina, F2, Bratislava 84228, Slovak Republic
ABSTRACT
The photoluminescence (photoluminescence) spectra
of PS (porous silicon) prepared
via electrochemical etching are presented and analysed. The PL of samples was measured
at various temperatures. The corresponding parameters of peaks (energy, intensity
and FWHM) were calculated using a fitting procedure, where the PL spectrum was approximated
by a set of Gaussian peaks. This model is based on the presumption that the emission
of photons in the PL process represents independent events. The optimal number of peaks used in
the model was estimated, where the residuum of the approximation was used as a criterion.
The low thermal dependence of energies in the PL spectra (blue shift) indicates
the strong influence of defects on the position of corresponding PL maxima. The
observed increase of energies of peaks with temperature requires additional explanation.
KEYWORDS
porous silicon, Gaussian peaks, photoluminescence peak position.
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