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Dielectric Properties of ZrTiO4 Thin Films Prepared by Reactive DC Magnetron Co-sputtering
J. Thammapreecha1, A. Treetong2, B. Putasaeng3, N.Witit-anun1,4, S. Chaiyakun1,4,5 and P. Limsuwan5,6
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DOI:10.17265/2159-5348/2017.06.004
1. Department of Physics, Faculty of Science, Burapha University, Chonburi 20131, Thailand 2. Nano Characterization Laboratory (NCL) National Nanotechnology Center National Science and Technology Development Agency 111 Thailand Science Park, Phahonyothin Road, Khlong Nueng, Khlong Luang, Pathum Thani 12120, Thailand 3. National Metal and Materials Technology Center (MTEC) 114 Thailand Science Park (TSP), Phahonyothin Road, KhlongNueng, KhlongLuang, PathumThani 12120, Thailand 4. Vacuum Technology and Thin Film Research Laboratory, Department of Physics, Faculty of Science, Burapha University, Chonburi 20131, Thailand 5. Thailand Center of Excellence in Physics, CHE, Ministry of Education, Bangkok 10400, Thailand 6. Department of Physics, Faculty of Science, King Mongkut’s University of TechnologyThonburi, Bangkok 10140, Thailand
ZrTiO4 is a small ceramic constituent material which has very good thermal and electrical properties. ZrTiO4 thin films were deposited by reactive dc magnetron co-sputtering method. The crystal structure, surface morphology, thickness and dielectric properties were characterized by XRD (X-ray diffraction), AFM (atomic force microscopy), FE-SEM (field emission scanning electron microscope), and precision impedance analyzer respectively. These films were crystallization of the orthorhombic phase (111) of ZrTiO4. The microstructure of well-crystallized ZrTiO4 thin films had the surface morphology was smooth with 1.695 nmrms roughness. The high dielectric constant width decreases from 129.2 to 110.6 when sputtering current increases which are higher more than that had researched because of higher energy but impedance; |Z| increases from 1.97 to 2.47 kΩ. These results are consistent with the RMS roughness results, which are the RMS roughness decrease with increasing sputtering current.
ZrTiO4, thin films, dielectric constant, magnetron sputtering.