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Planar Magnetron Sputtering Device: A New Generation of Magnetron Sputtering Design and Technology



Author(s)

Z. V. Berishvili1,2, I. I. Gadakhabadze, I. I. Kordzakhia2, G. G. Dekanozishvili2

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DOI:10.17265/2159-5348/2017.05.003

1. Caucasus University, Tbilisi 0102, Georgia 2. LEPL Institute “OPTICA”, Tbilisi 0160, Georgia

We have developed the original design of the planar magnetron sputtering devices, where a turbulent flow of cooling liquid is created in the cathode assembly to rotate the cathode block. Under pressure on the blade of the magnetic system holder, the flow of liquid causes to rotate the entire magnetic assembly. Rotation of the magnetic system under the sputtered circular target cathode ensures synchronous movement of the closed magnetic field along its surface. The configuration of the magnetic system, calculated by the mathematical method, taking into account the magnetic field closedness, makes it possible to obtain, on the maximum possible target area, a magnetic field vector parallel to its surface and, therefore, a maximum uniform area of erosion. The intensity of ion bombardment on the surface of the target “undulates”, embracing all its new non-dispersed areas, and they alternately undergo intensive sputtering. Herewith a new physical mechanism of magnetron sputtering of the target surface is realized, which has a significant effect on the stability of technological processes and the physical characteristics of the resulting films. In addition, by adjusting the distance between the opposite poles of the permanent magnet arrays, it is possible to change the configuration of the magnetic field on the target surface. This makes it possible to regulate the distribution of the intensity of ion bombardment on the target surface, which, in one’s turn, together with the regulation of the rotation rate of the magnetic system, opens new possibilities for controlling the technological modes of atomization.

Magnetron, array, magnets, circuit, erosion.