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Inductive Type Impedance of High Sensitivity Silicon Avalanche Photodiodes with Deeply Buried Micropixels



Author(s)

E. A. Jafarova, Z. Y. Sadygov, A. A. Dovlatov, L. A. Aliyeva, E. S. Tapdygov and K. A. Askerova

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DOI:10.17265/2328-2223/2017.04.002

There have been investigated reactive properties of silicon avalanche photodiodes (MAPD—micropixel avalanche photodiode) with deeply buried micropixels (amplification channels) within AC signal frequencies f = 50-500 kHz. By experiment it is found out that measured capacitance of structures involving three p-n junctions in section passing through the pixels increases exponentially with U_for (negative potential is applying to n-Si substrate) reaches maximum and at certain value U_for = U_inv changes the sign becoming the negative capacitance (equivalent inductance). The magnitude of active component of complete conduction G grows with the applied voltage and reaches maximum value ~70 mS at U_for = 1.0 V (f = 500 kHz). There has been calculated difference in phase j appearing between current and voltage and it is shown that at U_for = 0 V the j = 80^o and passes through the zero at U_for = 0.55 V. The magnitude of negative capacitance recalculated to the inductance value with the growth of forward bias being decreased sharply tends to the saturation.

Micro-pixel avalanche photodiode, p-n junction capacitance, p-n junction inductance, inversion voltage.