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This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License
Article
Problems and Properties of a Current Amplifier When Realized in Ultra Deep Sub-micron Technology
Author(s)
Simeon Kostadinov1, Ivan Uzunov2 and Dobromir Gaydazhiev3
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DOI:10.17265/1548-7709/2017.01.005
Affiliation(s)
1. Smartcom Bulgaria AD, Department of Microelectronics, 36 Dragan Tzankov blvd., Sofia 1040, Bulgaria
2. SmartLab AD, BIC IZOT, Build. 1, 133 Tzarigr. Shosse blvd., Sofia 1784, Bulgaria
3. Smartcom Bulgaria AD, Department of Microelectronics, 36 Dragan Tzankov blvd., Sofia1040, Bulgaria
ABSTRACT
The paper considers the problems related to short-channel effects in a
current amplifier, when realized in ultra-deep sub-micron technology. A short
description of the circuit and a limitation concerning its basic parameters is
given at the beginning. Several steps, allowing an approximate design of the
circuit, are outlined. They are applied for design of three versions of the
amplifier, each of them is realized with FETs having different channel length:
90 nm, 45 nm and 30 nm. Their
basic properties are simulated and discussed, demonstrating the major benefit
of the shortening of the channel length—extension of the frequency bandwidth. The problems arising with the
shorter channels length are also considered briefly.
KEYWORDS
Amplifiers, current mode operation, short-channel effects, MOSFET.
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