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Low Temperature Plasma CVD Grown Graphene by Microwave Surface-Wave Plasma CVD Using Camphor Precursor



Author(s)

Hideo Uchida1, Hare Ram Aryal1, 2, Sudip Adhikari1, 2 and Masayoshi Umeno2

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DOI:10.17265/2159-5348/2016.02.005

1. Department of Electronics and Information Engineering, Chubu University, Matsumoto 1200 Kasugai, Aichi 487-5801, Japan 2. Institute for General Research of Science, Chubu University, Matsumoto 1200 Kasugai, Aichi 487-5801, Japan

Hydrocarbon precursor such as methane has been widely used to grow graphene films and the methods of growing quality graphene films are dominated by thermal CVD (chemical vapor deposition) system. Graphene films grown by plasma process are generally highly defective which in turns degrade the quality of the films. Here, using a green precursor, camphor we demonstrate a simple and economical method to get high-quality graphene film on copper substrate by micro wave surface-wave plasma CVD at relatively low temperature 550℃. Graphene film grown using camphor shows superior quality than that of the film grown using methane. Results revealed that camphor precursor is a good alternative to hydrocarbon precursors for graphene research.

Camphor, plasma CVD, quality graphene, plasma induced defects.