Paper Status Tracking

Journals by Title

Journals by Subject

Contact us

	[email protected]
	3275638434

	Paper Publishing WeChat

Useful Links

Creative Commons Attribution-NonCommercial 4.0 International License

Article

Open Access

High Resolution Medium Energy ion Scattering Analysis for Investigating UltraShallow Junction of Antimony Implanted in Conventional Silicon

Author(s)

Talal H. Alzanki^1*, Kandil M. Kandil², Chris Jeynes³, Brian J. Sealy³, Mohammad R. Alenezi¹, Abdullah Almeshal¹, Naziha M. Aldukhanand¹ and Adel Ghoneim²

Full-Text PDF Download XML 1675 Views

DOI:10.17265/2161-6213/2016.1-2.002

Affiliation(s)

1. Department of Electronic Engineering, Collage of Technological Studies,Public Authority for Applied Education &Training (PAAET), P.O. BOX 42325 Safat, Kuwait
2. Department of Applied Sciences, Collage of Technological Studies, Public Authority for Applied Education &Training (PAAET), P.O. BOX 42325 Safat, Kuwait
3. Advanced Technology Institute, School of Electronics and Physical Sciences, University of Surrey, Guildford, GU2 7XH, UK

ABSTRACT

Forming ultrashallow junction reduces the source / drain channel length, which improves the CMOS (Complementary metal oxide semiconductor) device performance and the speed of the integrated circuits. Antimony (Sb) of low implant energy 2 keV at implant dose 1 × 1015 cm-2 is implanted in conventional silicon wafer (100). Rapid RTA (Thermal annealing technique) is suitable for the as- implanted samples to recover the radiation damaged region and to activate the implanted antimony. This paper investigates the electrical activation of the implanted antimony by estimating its substitutional fraction in the formed ultra junction in silicon wafer by the possibilities of combining the measurements of RBS (Rutherford backscattering spectroscopy) and MEIS (Medium energy ion scattering). It was found that RTA (Rapid thermal annealing) of the as-implanted samples at temperatures ≤ 800 °C, the substitutional antimony fraction and the retained dose also are about 90% of the nominal dose. However, annealing at temperatures > 800 °C up to 1,100 °C antimony precipitate near to the surface and deactivate the electrical conduction by about 50% with increasing the sheet resistance by about 30%.

KEYWORDS

Antimony doped Si, ion implantation, rutherford backscattering spectroscopy (RBS), medium energy ion scattering (MEIS), rapid thermal annealing (RTA), shallow junction formation.

Cite this paper

References

High Resolution Medium Energy ion Scattering Analysis for Investigating UltraShallow Junction of Antimony Implanted in Conventional Silicon

Talal H. Alzanki1*, Kandil M. Kandil2, Chris Jeynes3, Brian J. Sealy3, Mohammad R. Alenezi1, Abdullah Almeshal1, Naziha M. Aldukhanand1 and Adel Ghoneim2

Talal H. Alzanki^1*, Kandil M. Kandil², Chris Jeynes³, Brian J. Sealy³, Mohammad R. Alenezi¹, Abdullah Almeshal¹, Naziha M. Aldukhanand¹ and Adel Ghoneim²