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Mechanism Research of Hg⁰ Oxidation by Pulse Corona Induced Plasma Chemical Process



Author(s)

Hao Shuoshuo, Chen Yang, Fan Yanxiang, Yin Lianqing, Zhang Lijun and Feng Qinzhong

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DOI:10.17265/2162-5263/2016.01.001

The oxidation of Hg⁰ by Pulse Corona Induced Plasma Chemical Process (PPCP) was investigated through changing discharge voltage, pulse frequency and gas compositions. Experimental results indicate that active radicals including O, O₃ and OH can contribute to the oxidation of elemental mercury. 10 kV is the onset voltage, and the higher voltage the better removal efficiency. While with the increase of pulse frequency, the Hg0 concentration falls rapidly at first but then rises rapidly. The best oxidation condition is at 12 kV and 600-800 PPS. Adding O₂ can significantly promote oxidation. With NO and SO₂ existed, there is an inhibition of mercury oxidation, and NO has a greater influence. Addition of HCl can promote oxidation slightly but affect the initial concentration of mercury significantly. Little moisture content can promote oxidation, while too much H₂O can not only resist the oxidation, but also affect the initial concentration of mercury. The mercury oxidation rate can increase to 97.95% at 12 kV/800 PPS with the system of 10% O₂/3% H2O/50 ppm HCl. However, mercury oxidation efficiency can reduce down to 20% with 100 ppm NO added.

Non-thermal plasma, mercury, oxidation, flue gas cleaning