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Article
Author(s)
Kazunori Ichikawa1*, Hiroshi Akamatsu1, Yoshiyuki Suda2, Yoshiyuki Nonoguchi3 and Yukiharu Uraoka3
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DOI:10.17265/2161-6221/2015.9-10.001
Affiliation(s)
1. Department of Electrical Engineering, Kobe City College of Technology, Kobecity, Hyogo, 651-2194, Japan
2. Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi City, Aichi, 441-8580, Japan
3. Grduate School of Materials Science, Nara Institute of Science and Technology, Ikoma City, Nara, 630-0192, Japan
ABSTRACT
Graphene has shown great potential for high speed devise and transparent electrode in recent years. Thermal CVD (Chemical vapor deposition) with methane gas is the most popular method for graphene synthesis. However, a high temperature of 900 ºC and higher is necessary for synthesizing high-quality graphene. In this study, monolayer graphene with fewer defects was synthesized using acetylene gas at 800 ºC. In addition, an optimal CVD condition for monolayer graphene with fewer defects was investigated by changing the nickel catalyst film thickness, hydrogen concentration, and cooling condition. The results showed that the number of the graphene layers decreased with an increase of the nickel film thickness. Furthermore, although a small amount of hydrogen reduced the amount of the defect, a lot of hydrogen etched the graphene. The fastest cooling rate in pure nitrogen was effective for synthesis of graphene with high crystallinity and with almost no defect. We succeeded in the monolayer graphene synthesis with a low density of defects on nickel catalyst film by a thermal CVD at 800 ºC using acetylene gas.
KEYWORDS
Graphene, thermal CVD (Chemical vapor deposition).
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